IRF2907ZS-7PPBF ,IRF2907ZS-7PPBFApplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°CContinuous Drain Current, V @ ..
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IRF2907ZS-7PPBF
IRF2907ZS-7PPBF
International
Tart, Rectifier
Features
. Advanced Process Technology
. Ultra Low On-Resistance
. 175°C OperatingTemperature
. Fast Switching
. Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designedforhigh current, high reliabil-
ity applications, this HEXFET6 Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technologyto achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fastswitching speed
and improved repetitive avalanche rating .These
features combine to makethis design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
Absolute Maximum Ratings
PD - 97031
IRF2907ZS-7PPbF
HEXFET8 Power MOSFET
s (Pin 2, 3, 5, 6, 7)
G (Pin l)
VDSS = 75V
RDS(on) = 3.8mf20)
ID =160A
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves © 10V (Silicon Limited) 180 A
In © To = 100°C Continuous Drain Current, Ves © 10V (See Fig. 9) 120
ID © To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 160
IDM Pulsed Drain Current CD 700
PD @Tc = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 w/oc
Vss Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 160 mJ
EAs(tested) Single Pulse Avalanche Energy Tested Value © 410
'AR Avalanche Current CD See Fig.12a,12b,15,16 A
Ean Repetitive Avalanche Energy G) mJ
TJ Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 |bfoin (1.1N-m)
Thermal Res stance
Parameter Typ. Max. Units
ch Junction-to-Case - 0.50 °C/W
Rocs Case-to-Sink, Flat, Greased Surface 0.50 --
ROJA Junction-to-Ambient -- 62
ROJA Junction-to-Ambient (PCB Mount, steady state) Q). - 40
HEXFET® is a registered trademark of International Rectifier.
1
08/03/05
IRF2907ZS-7PPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 75 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.066 - VPC Reference to 25°C, ID = 1mA
RDS(on) SMD Static Drain-to-Source On-Resistance - 3.0 3.8 mg Vss = 10V, ID = 110A ©
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250PA
gts Forward Transconductance 94 - - S Vos = 25V, ID = 110A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 75V, I/ss = 0V
-- - 250 Vos = 75V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 200 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -200 l/ss = -20V
q, Total Gate Charge -- 170 260 nC ID = 110A
Qgs Gate-to-Source Charge - 55 - Vos = 60V
di Gate-to-Drain ("Miller") Charge - 66 - Vss = 10V ©
tum) Turn-On Delay Time - 21 - ns VDD = 38V
t, Rise Time - 90 - ID = 110A
tdom Turn-Off Delay Time - 92 - Re = 2.69
t, Fall Time - 44 - l/ss = 10V ©
Lo Internal Drain Inductance - 4.5 - nH Between lead, _ é:
6mm (0.25in.) J L7)
Ls Internal Source Inductance - 7.5 - from package G rig
and center of die contact s
Ciss Input Capacitance -- 7580 -- pF Vss = 0V
Coss Output Capacitance -- 970 -- Vros = 25V
Crss Reverse Transfer Capacitance - 540 -- f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3750 - Vss = OV, v03 = 1.0V, f = 1.0MHz
Coss Output Capacitance - 650 - Vss = 0V, VDs = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1110 - Vss = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 160 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 700 integral reverse a
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 110A, vss = 0V ©
t,, Reverse Recovery Time - 35 53 ns Tu = 25°C, IF = 110A, VDD = 38V
l Reverse Recovery Charge -- 40 60 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmaX, starting Tu = 25°C,
L=0.026mH, Rs = 259, IAS = 110A, VGS =10V.
Part not recommended for use above this value.
6) Pulse width S 1.0ms; duty cycle S 2%.
(ii) Coss eff. is a fixed capacitance that gives the same
charging time as Cass while VDS is rising from 0 to 80%
G) Limited by TJmaX , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
co This value determined from sample failure population. 100%
tested to this value in production.
co This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-1O Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Ro is measured at Tu of approximately 90°C.
