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IRF1902-IRF1902TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94282A
International ,
TOR Rectifier IRF 902
HEXFET© Power MOSFET
0 Ultra Low On-Resistance Voss RDS(on) max (mf2) ID
q N-Channel MOSFET 20V 85@VGS = 4.5V 4.0A
. Surface Mount 170@Ves = 2.7V 3.2A
q Available in Tape & Reel
Description
These N-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing s EED2 7DID
techniques to achieve the extremely low on-resistance
per silicon area. This beneht provides the designer
with an extremely efficient device for use in battery G m4 5mm D
and load management applications..
SEUJa [EDD
The SO-8 has been modified through a customized Top View SO 8
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. VWththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGs @ 4.5V 4.2
ID @ TA-- 70°C Continuous Drain Current, VGS © 4.5V 3.4 A
IDM Pulsed Drain Current C) 17
PD @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation© 1.6
Linear Derating Factor 0.02 mW/°C
VGS Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 CC
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °C/W
1
11/15/01
IRF1902 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.019 - V/°C Reference to 25°C, ID = 1mA
. . . - - 85 N/ss = 4.5V, lo = 4.0A ©
R Static Drain-to-Source On-Resistance
DS(on) - - 170 mn Vss = 2.7V, ID = 3.2A ©
VGS(th) Gate Threshold Voltage 0.70 - - V Vros = VGs, ID = 250pA
gfs Forward Transconductance 5.6 - - S Vos = 10V, ID = 4.0A
. - - 1.0 Vos =16V,VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - 25 PA Vros = 16V, VGS = OV, TJ = 70°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -12V
09 Total Gate Charge - 5.0 7.5 lo = 4.2A
Qgs Gate-to-Source Charge - 1.2 - nC Vros = 10V
di Gate-to-Drain ("Miller") Charge - 1.8 - VGs = 4.5V
tam) Turn-On Delay Time - 5.9 - VDD = 10V ©
tr Rise Time - 13 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 23 - Rs = 53n
tr Fall Time - 19 - VGS = 4.5V
Ciss Input Capacitance - 310 - VGS = 0V
Coss Output Capacitance _ 130 _ pp Vos = 15V
Crss Reverse Transfer Capacitance - 55 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 4 2 MOSFET symbol D
(Body Diode) - - . showing the
ISM Pulsed Source Current 17 integral reverse G
(Body Diode) C) - - p-n junction diode. s
I/so Diode Forward Voltage - - 1.2 V To = 25°C, Is = 2.5A, VGs = 0V ©
trr Reverse Recovery Time - 38 57 ns To = 25°C, IF = 2.5A
Qrr Reverse Recovery Charge - 42 63 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width f 400ps; duty cycle s 2%.
2
