IRF1404ZPBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications. TO-220AB D Pak TO-262IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbFAbsolute Maximum RatingsPar ..
IRF1404ZS ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 40V● 175°C O ..
IRF1404ZSTRLPBF ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures Advanced Process Technology®HEXFET Power MOSFET Ultra Low On-Resistance 175°C Operating ..
IRF1405 ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1405L ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1405PBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications®● Electric Power Steering (EPS)HEXFET Power MOSFET● Anti-lock Braking System (ABS)D● W ..
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-10T , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216L-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF1404ZPBF-IRF1404ZSTRLPBF
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 96040C
International
" ifi IRF1404ZPbF
TOR, RGCTI Ier lRF1404ZSPbF
Features IRF1404ZLPbF
. Advanced Process Technology HEXFET8 Power MOSFET
. Ultra Low On-Resistance
. 175°C OperatingTemperature D V(BR)Dss 40V
. Fast Switching
R on t . 2.7
. Repetitive Avalanche Allowed up to Tjmax DS( ) yp m9
. Lead-Free max. 3.7mQ
Description lD(Silicon Limited) 180AtD
This HEXFET8 Power MOSFET utilizes the latest s lD(Package Limited) 120A
processingtechniquestoachieveextremelylowon-
resistance per silicon area. Additional features of ,.
thisdesign area175°Cjunctionoperatingtemperature, t "1'4iih 'tiii),) 11i,it
fast switching speed and improved repetitive \p7 \_ \Jf‘f’
avalanche rating .These featu res combine to make . V
this design an extremely efficient and reliable device . t
for use in a wide variety of applications. TO-220AB D2Pak TO-262
IRF1404ZPbF IRF1404ZSPbF FF1404ZLPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vos © 10V (Silicon Limited 180 ty)
ID © To = 100°C Continuous Drain Current, Vos © 10V 120 © A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (P cxiaxpsLimitet0 120 o
IDM Pulsed Drain Current co 710
PD @Tc = 25°C Power Dissipation 200 W
Linear Deratinq Factor 1.3 WPC
VGS Gate-to-Source Voltage 1 20 V
EAS (Thermally limited) Single Pulse Avalanche Energy© 330 m
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 480
IAR Avalanche Current (9 See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © m]
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mountinu Torque 6-32 or M3 screw C) 1O Ibf'in (1.1 N'm)
Thermal Resistance
Parameter Typ. Max. Units
Rem Junction-to-Case - 0.75 ©
Recs Case-to-Sink, Flat Greased Surface co 0.50 - °C/W
ReJA Junction-to-Ambient Cr) - 62
ReJA Junction-to-Ambient (PCB Mount) - 40
1
06/19/12
llRF'14042yS/LPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bapss Drain-to-Source Breakdown Voltage 40 - - V Vas = 0V, ID = 250pA
AV(3R)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.033 - VPC Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance -- 2.7 3.7 mn Vas = 10V, ID = 75A ©**
Vesm.) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
gfs Forward Transconductance 170 - - V Vos = 25V, lo = 75A**
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, Veg = 0V
- - 250 l/rss = 40V, Ves = 0V, T, = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage .-..-_ --- -200 Vas = -20V
Qg Total Gate Charge - 100 150 ID = 75A"
Qgs Gate-to-Source Charge - 31 - nC Vos = 32V
qu Gate-to-Drain ("Miller") Charge - 42 - Vas = 10V ©
tdm Turn-On Delay Time - 18 - VDD = 20V
t, Rise Time - 110 - ID = 75A"
tdom Turn-Off Delay Time - 36 - ns Rs = 3.0 Q
ti Fall Time - 58 - Ves = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 4340 - Veg = 0V
Coss Output Capacitance - 1030 - Vos = 25V
Crss Reverse Transfer Capacitance - 550 - pF f = 1.0MHz
Coss Output Capacitance - 3300 - Vas = 0V, l/rss = 1.0V, f = 1.0MHz
Coss Output Capacitance - 920 - Vas = 0V, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1350 - Vas = 0V, Vos = 0V to 32V C9
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 120© MOSFET symbol "
(Body Diode) A showing the j)
ISM Pulsed Source Current - - 750 integral reverse C) _
(Bodv Diode) (D p-n iunction diode. "s,
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A**,VGS = 0V ©
tr, Reverse Recovery Time - 28 42 ns TJ = 25°C, IF = 75A", l/oo = 20V
G, Reverse Recovery Charge - 34 51 no di/dt = 100A/ps ©
ton Forward Turn-On Time lntrirtiictLrryontirrEyis rzx)ig13e0trrronis dorrirxiadtvLSkD)
2
