IRF140 ,N-Channel Power MOSFETs/ 27 A/ 60-100VPD - 90369REPETITIVE A V ALANCHE AND dv/dt RATED IRF140100V, N-CHANNELHEXFET TRANSISTORSTHRU-HOLE ..
IRF1404 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-91896FIRF1404®HEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynami ..
IRF1404L ,40V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD -93853CIRF1404SIRF1404L®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistan ..
IRF1404PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at powerTO-220ABdissipation levels to approximately 50 watts. The lowthermal resistanc ..
IRF1404S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1404S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-12TI , 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IRF140
N-Channel Power MOSFETs/ 27 A/ 60-100V
International
IEZR Rectifier
REPE I I I I V E AVALANCHE AND dV/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF 140 100V 00779 28A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
PD - 90369
IRF14O
100V, N-CHANNEL
tr:--"-';;))
tance combined with high transconductance; superior re- TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature I! Repetitive Avalanche Ratings
stability of the electrical parameters. I: Dynamic dv/dt Rating
They are well suited for applications such as switching u Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio " Simple Drive Requirements
amplifiers and high energy pulse circuits. " Ease ofParalleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 2 8
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 20 A
IDM Pulsed Drain Current C) 1 12
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 250 mJ
IAR Avalanche Current Cf) 28 A
EAR Repetitive Avalanche Energy co 12.5 m.)
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF140 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.13 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.077 VGS =10V, ID = 20A co
Resistance - - 0.089 VGS =10V, ID-- 28A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 9. l - - S (V) VDS > 15V, IDS = 20A ©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=80V,VGS=0V
- - 250 HA VDS =80V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 30 - 59 VGS =10V, ID =28A
Qgs Gate-to-Source Charge 2.4 - 12 nC VDS =50V
Qgd Gate-to-Drain ('Miller') Charge 12 - 30.7
td(on) Turn-On Delay Time - - 2 l VDD =50V, ID =28A,
tr Rise Time - - 145 RG =9.lf2
tti(om Turn-Off Delay Time - - 21 ns
tf Fall Time - - 105
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/O.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 1660 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 550 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 120 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 28 A
ISM Pulse Source Current (Body Diode) C) - - l 12
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, IS = 28A, VGS = 0V co
trr Reverse Recovery Time - - 400 nS Tj = 25°C, IF = 28A, di/dt S 100A/ys
QRR Reverse Recovery Charge - - 2.9 pC VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.0 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
