IC Phoenix
 
Home ›  II23 > IRF1310NS-IRF1310NSTRL,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF1310NS-IRF1310NSTRL Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF1310NSIRN/a4800avai100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF1310NSTRLIRN/a545avai100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF1310NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF1310NSTRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91514BIRF1310NS/L®HEXFET Power MOSFETl Advanced Process Technology DV =100Vl Surface Mount (IR ..
IRF1310NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationswhtmstiite Maximum Ratings Parameter Max. Units ID @ TC _ 25'C Canllnuous Dram Curr ..
IRF1310S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRF1312 ,80V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 10mΩ 95A Motor Control Uni ..
IRF1312L ,80V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 94504IRF1312IRF1312SIRF1312LHEXFET Power MOSFET
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KI , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K , 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256-8TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10K , 32K x 16 LOW VOLTAGE CMOS STATIC RAM


IRF1310NS-IRF1310NSTRL
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10V… 42D C GSI @ T = 100°C Continuous Drain Current, V @ 10V… 30 AD C GSI Pulsed Drain Current �… 140DMP @T = 25°C Power Dissipation 3.8 WD AP @T = 25°C Power Dissipation 160 WD CLinear Derating Factor 1.1 W/°CV Gate-to-Source Voltage ± 20 VGSE Single Pulse Avalanche Energy‚… 420 mJASI Avalanche Current� 22 AARE Repetitive Avalanche Energy� 16 mJARdv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/nsT Operating Junction and -55 to + 175JT Storage Temperature RangeSTG °CSoldering Temperature, for 10 seconds 300 (1.6mm from case )Thermal ResistanceParameter Typ. Max. UnitsR Junction-to-Case ––– 0.95θJC°C/WR Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40θJA5/13/98Downloaded from: http://www.ic-phoenix.com/stock/IRF1310NS/L
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED