IRC540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagehnternati
onal
TOR Rectifier
PD-9.592A
TlC540
HEXFET® Power MOSFET
q Dynamic dv/d ..
IRC630 ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
PD-9.565B
IRC630
TO-22O HexSense
Parameter Ma ..
IRC634 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
TO4t20 HexSense
- _-_ Parameter Max. Units
19 @ Tc = ..
IRC644 ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageInternational
TOR
Rectifier
PD-9.569A
IRC644
HEXFET® Power MOSFET
. Dynamic dv/dt ..
IRC740 ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packageapplications.
Absolute Maximum Ratings
VDSS = 400V
RDS(on) = 0.5592
Parameter Max. Units
..
IRC840 ,500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) packagePD-9.593B
lRC840
International
TOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rati ..
IS61LV256-10TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15JI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15JI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV256-15TI , 32K X 8 LOW VOLTAGE CMOS STATIC RAM
IS61LV25616-10TI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616-12K , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IRC540
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
applications.
Absolute Maximum Ratings
Kelvin
Source
Current
Sense
VDSS = 100V
RDS(on) "-'." 0.077Q
ID = 28A
TO-220 HexSense
Parameter Max. Units
in © Tc = 25°C Continuous Drain Current, VGs @ 10 V 28
to © To = 100°C Continuous Drain Current, Ves @ 10 V 20 A
low. Pulsed Drain Current C) 110
Po @ Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WPC
Vss Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 100 mJ
{AR Avalanche Current co 28 A
EAR Repetitive Avalanche Energy co 15 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to +175
Tam Storage Temperature Range I
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Nam)
Thermal Resistance
Parameter Min. Typ. Max. Units
Tuc Junction-to-Case - - 1 .0
Recs Case-to-Sink, Flat, Greased Surface -- 0.50 - °C/W
RNA Junction-to-Ambient - - 62
DATA
SHEETSIRC540
7
