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IR2180IR ?N/a19avaiHigh and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-pin DIP package
IR2181IORN/a3avaiHigh and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-pin DIP package
IR21814SNSN/a1avaiHigh and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs, All High Voltage Pins On One Side, Separate Logic and Power Ground in a 14-lead SOIC package
IR2181SIRN/a1avaiHigh and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-lead SOIC package


IR2180 ,High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-pin DIP packageFeaturesFloating channel designed for bootstrap operation•Fully operational to +600V14-Lead PDIPTol ..
IR2181 ,High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-pin DIP packageFeaturesFloating channel designed for bootstrap operation•Fully operational to +600V14-Lead PDIPTol ..
IR21814PBF ,HIGH AND LOW SIDE DRIVERFeaturesFloating channel designed for bootstrap operation•Fully operational to +600V14-Lead PDIPTol ..
IR21814S ,High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs, All High Voltage Pins On One Side, Separate Logic and Power Ground in a 14-lead SOIC packageFeaturesFloating channel designed for bootstrap operation•Fully operational to +600V14-Lead PDIPTol ..
IR21814SPBF ,HIGH AND LOW SIDE DRIVERElectrical CharacteristicsV (V , V ) = 15V, V = COM, C = 1000 pF, T = 25°C.BIAS CC BS L ASSSymbol D ..
IR2181S ,High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-lead SOIC packageElectrical CharacteristicsV (V , V ) = 15V, V = COM, C = 1000 pF, T = 25°C.BIAS CC BS L ASSSymbol D ..
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IR2180-IR2181-IR21814S-IR2181S
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs in a 8-pin DIP package
International
ISZR Rectifier
Data Sheet No. PD60172 Rev.G
IR2181(4)(S) &(PbF)
Features
q Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
. Gate drive supply range from 10 to 20V
. Undervoltage lockout for both channels
q 3.3V and 5V input logic compatible
q Matched propagation delay for both channels
q Logic and power ground +/- 5V offset.
. Lower di/dt gate driver for better noise immunity
. Output source/sink current capability 1.4A/1
q Also available LEAD-FREE (PbF)
HIGH AND LOW SIDE DRIVER
Packages
At 8-Lead PDIP 1ttti/r'
IR2181
Jj / "
8-Lead SOIC ”$32233":
BA IR2181S
lR2181/lR2183/IR2184 Feature Comparison
Description
The IR2181(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with independent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
Cross-
Part lnpth conduction Dead-Time Ground Pins Ton/Tot
logic prevention
2181 COM
21814 HIN/LIN no none VSS/COM 180/220 ns
2183 - Internal 500ns COM
21834 HIN/LIN yes Program 0.4 - 5 us VSS/COM 1801220 ns
2184 - Internal 500ns COM
21844 IN/SD yes Program 0.4 - 5 us VSS/COM 680/270 ns
CMOS technologies enable rugge-
dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high
conduction. The floating channel can be used
configuration which operates up to 600 volts.
pulse current buffer stage designed for minimum driver cross-
to drive an N-channel power MOSFET or IGBT in the high side
Typical Connection
IR2181
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
up tty MXN
up to 600V
IR21814


IR21 81 (4) (S) & (PbF) International
TOR Rectifier
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VB High side floating absolute voltage -O.3 625
Vs High side floating supply offset voltage VB - 25 VB + 0.3
VH0 High side floating output voltage Vs - 0.3 VB + 0.3
Vcc Low side and logic fixed supply voltage -0.3 25
VLO Low side output voltage -0.3 Vcc + 0.3 V
VIN Logic input voltage (HIN & LIN - |R2181/IR21814) Vss - 0.3 Vss +10
VSS Logic ground (|R21814 only) VCC - 25 Vcc + 0.3
st/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA 3 +25°C (8-Iead PDIP) - 1.0
(8-lead SOIC) - 0.625
(14-Iead PDIP) - 1.6 W
(14-Iead SOIC) - 1.0
RthJA Thermal resistance, junction to ambient (8-lead PDIP) - 125
(8-lead SOIC) - 200 ''C/W
(14-lead PDIP) - 75
(14-lead SOIC) - 120
Tu Junction temperature - 150
Ts Storage temperature -50 150 °c
TL Lead temperature (soldering, 10 seconds) - 300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The Vs and VSS offset rating are tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side Mating supply absolute voltage Vs + 10 Vs + 20
Vs High side floating supply offset voltage Note 1 600
VH0 High side floating output voltage Vs VB
Vcc Low side and logic Fixed supply voltage 10 20 V
VLO Low side output voltage 0 VCC
VIN Logic inputvoltage (HIN & LIN - |R2181/IR21814) vss Vss + 5
VSS Logic ground (lR21814/lR21824 only) -5 5
TA Ambient temperature -40 125 ''C
Note 1: Logic operational for Vs of -5 to +600V. Logic state held for Vs of RN to -VBs. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.
2

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