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IR04H420
500V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
nternaiitynall Data Sheet No. PD-6.078
P* Rectifier lilR04H42 O
HIGH VOLTAGE HALF-BRIDGE
Features Product Summary
El Output Power MOSFETs in half-bridge configuration
CI 500V Rated Breakdown Voltage
ty High side gate drive designed for bootstrap operation ViN (max) 500V
El Matched propagation delay for both channels 1 30
D Independent high and low side output channels torvott ns
I:I Undervoltage lockout
El 5V Schmitt-triggered input logic tr, 270 ns
ty Half-Brid e out ut in hase with IN
g p p RDS(on) 3.09
D Cross conduction prevention logic
ty Internally set dead time PD (TA = 25 oC) 2.0W
ty Shut down input turns off both channels
The |R04H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET© power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible rr,rmasrair_,,,s.,
with standard CMOS or LSTTL outputs. The front end |R04H420 (iWil
features an independent high and low side driver in are.,
phase with the logic compatible input signals. The
output features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the half-
bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
Typical Connection
UP TO 500V DC BUS
IRDIH420
Vccc 1 6
IN 0 2 a
a e == 3 - 7 T 0
TD LOAD
IR04H420 TOR
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol Definition Min. Max. Units
VIN High Voltage Supply -0.3 500
VB High Side Floating Supply Absolute Voltage -0.3 525
vo Half-Bridge Output Voltage -0.3 VIN + 0.3 V
W, Logic Input Voltage (IN tery) -0.3 Vcc + 0.3
Vcc Low Side and Logic Fixed Supply Voltage -0.3 25
dv/dt Peak Diode Recovery dv/dt - 3.5 V/ns
PD Package Power Dissipation @ TA s: +25°C - 2.00 W
ReJA Thermal Resistance, Junction to Ambient --- 60 "C/W
To Junction Temperature -55 150
Ts Storage Temperature -55 150 "C
Tr, Lead Temperature (Soldering, 10 seconds) - 300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Parameter
Symbol Definition Min. Max. Units
VB High Side Floating Supply Absolute Voltage VO + 10 V0 + 20
VIN High Voltage Supply - 500 V
VO Half-Bridge Output Voltage (note 1) 500
Vcc Low Side and Logic Fixed Supply Voltage 10 20
v.H Logic Input Voltage (IN & TD) o Vcc
ID Continuous Drain Current (TA = 25°C) --- 0.7 A
(TA = 85°C) - 0.5
TA Ambient Temperature -40 125 °C
Note 1: Logic operational for vo of -5 to 500 V. Logic state held for vo of -5 to - VB.
