IPD07N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.8mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 6.8 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3-1 ..
IPD088N04L G , OptiMOS3 Power-Transistor
IPD09N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 8.9mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 8.9 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3-1 ..
IPD09N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mΩDS(on),max 1)• Qual ..
IPD09N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =20 µ ..
IPD09N03LBG , OptiMOS®2 Power-Transistor
IRLB3034PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDDC Motor DriveV 40VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.1 ..
IRLB3036PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDDC Motor DriveV 60VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.1 ..
IRLB3813 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Isolated DC-DC1.95m @V = 10V30V Ω 57nCGS C ..
IRLBA3803P ,30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) packageapplications, reduce system power dissipation,upgrade existing designs or have TO-247 performance i ..
IRLBD59N04E ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 5-Lead packagePD -93910BIRLBD59N04E®HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resis ..
IRLD014 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageInternational
TOR Rectifier,
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
. For Automatic ..
IPD07N03L-IPU07N03L
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.8mOhm, 30A, LL
IPD07N03L
IPU07N03L
OptiMOSâ Buck converter series
Product Summary
Feature N-Channel Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature Avalanche rated dv/dt rated
· Ideal for fast switching buck converters
P- TO251 -3-1P- TO252 -3-11
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
IPD07N03L
IPU07N03L
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 116A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
IPD07N03L
IPU07N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPD07N03L
IPU07N03L
1 Power dissipationPtot = f (TC)
20
40
60
80
100
120
160 IPD07N03L
tot
2 Drain currentID = f (TC)
parameter: VGS³ 10 V
12
16
20
24
32 IPD07N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
IPD07N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPD07N03L
IPD07N03L
IPU07N03L
5 Typ. output characteristicID = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
55
60
IPD07N03L
6 Typ. drain-source on resistanceRDS(on) = f (ID)
parameter: VGS
10
12
14
16
18
20
24 IPD07N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
30
35
40
45
50
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
70
90
IPD07N03L
IPU07N03L
9 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
10
12
16 IPD07N03L
DS(on)
10 Typ. gate threshold voltageVGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: Tj , tp = 80 µs10 10 10 10
IPD07N03L
