| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPSO42GTR |
IR|International Rectifier |
N/a |
2500 |
 |
|
IPU04N03LA ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =80 ..
IPU060N03LG , OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
IPU060N03LG , OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
IPU06N03LA ,Low Voltage MOSFETs
IPU07N03L ,OptiMOS Power MOSFET, 30V, TO251, RDSon = 6.8mOhm, 30A, LLCharacteristicsV 30 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
IRLR7843TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRLR7843PbFIRLU7843PbF
IRLR8103V ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-94021CIRLR8103V• N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Lo ..
IRLR8103VTR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Q 12 nCSWThe package is designed for vapor phase, infra-red,Q29nCOSSconvection, or wav ..
