| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD14N03LA |
INFIN|Infineon |
N/a |
40 |
 |
|
IPD200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPD20N03L ,Low Voltage MOSFETsFeatureV30 VDS• N-ChannelR 20 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3-1 ..
IPD30N03S2L-07 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IRLI620G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI630G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI640 ,Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)applications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
