| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD09N03 |
INFINEON|Infineon |
N/a |
30000 |
 |
|
| IPD09N03 |
英飞凌|Infineon |
N/a |
34500 |
|
|
IPD09N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 8.9mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 8.9 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3-1 ..
IPD09N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mΩDS(on),max 1)• Qual ..
IPD09N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =20 µ ..
IPD09N03LBG , OptiMOS®2 Power-Transistor
IPD10N03LAG , OptiMOS®2 Power-Transistor
IRLD110PBF , HEXFET Power MOSFET
IRLD120 ,100V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageInternational
TOR Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Hating
0 Repetitive Aval ..
IRLH5030TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm packageFeatures≤ ΩLow R ( 9.0m ) Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Ena ..
