| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD03N03LAG |
Infineon Pb-free|Infineon |
N/a |
217 |
 |
OptiMOS®2 Power-Transistor |
IPD03N03LAP INFINEON
IPD03N03LAG , OptiMOS®2 Power-Transistor
IPD03N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
IPD03N03LBG ,OptiMOS 2 Power-TransistorcharacteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
IPD03N03LBG ,OptiMOS 2 Power-TransistorapplicationsI 90 AD• N-channel, logic level• Excellent gate charge x R product (FOM)DS(on)• Superio ..
IPD040N03L G , OptiMOS3 Power-Transistor
IRL540NL ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD -91535IRL540NS/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRL540NS)V = ..
IRL540NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRL540NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
