Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IPB06CN10N |
INFINEON|Infineon |
N/a |
145 |
|
|
IPB06N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 5.9mΩDS(on),max• N-chann ..
IPB06N03LAG , OptiMOS®2 Power-Transistor
IPB07N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 6.2mOhm, 80A, LLFeatureV30 VDS• N-ChannelR max. SMD version 5.9 mΩDS(on)• Logic LevelI 80 AD• Low On-Resistance RDS ..
IPB090N06N3 G , OptiMOS™3 Power-Transistor
IPB093N04L G , OptiMOS™3 Power-Transistor
IRL3103PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRL3103S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL3103S. ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to 2D Pak TO-262 ..