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IPB05N03LINFINEONN/a2600avaiOptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LL


IPB05N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LLFeatureV 30 VDS• N-ChannelR max. SMD version 4.9 mΩDS(on)• Logic LevelI 80 AD• Very low on-resistan ..
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IPB05N03L
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LL
IPP05N03L
IPB05N03L
OptiMOSâ Buck converter series
Product Summary
Feature

· N-Channel
· Logic Level
· Very low on-resistance R
· Excellent Gate Charge x R
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converters
P- TO263 -3-2P- TO220 -3-1
IPP05N03L
IPB05N03L
Thermal Characteristics
Characteristics
Static Characteristics
Current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 145A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
IPP05N03L
IPB05N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPP05N03L
IPB05N03L
1 Power dissipation
tot = f (TC)
20
40
60
80
100
120
140
180
IPP05N03L
tot
2 Drain current
D = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90
IPP05N03L
4 Max. transient thermal impedance
thJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
IPP05N03L
thJC
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPP05N03L
IPP05N03L
IPB05N03L
5 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190
IPP05N03L
6 Typ. drain-source on resistance
DS(on) = f (ID)
parameter: VGS
10
12
14
17
IPP05N03L
DS(on)
7 Typ. transfer characteristics
D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
25
50
75
100
125
150
175
200
250
8 Typ. forward transconductance
fs = f(ID); Tj=25°C
parameter: gfs
20
40
60
80
100
140
IPP05N03L
IPB05N03L
9 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 55 A, VGS = 10 V
10
11
12
IPP05N03L
DS(on)
10 Typ. gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
GS(th)
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
F = f (VSD)
parameter: T10 10 10 10
IPP05N03L
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