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IPB04N03LINFINEONN/a120avaiOptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL


IPB04N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LLCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
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IPB04N03L
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
IPP04N03L
IPB04N03L
OptiMOSâ Buck converter series
Product Summary
Feature

· N-Channel
· Logic Level
· Excellent Gate Charge x R
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter
P- TO263 -3-2P- TO220 -3-1
IPP04N03L
IPB04N03L
Thermal Characteristics
Characteristics
Static Characteristics
Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
IPP04N03L
IPB04N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPP04N03L
IPB04N03L
1 Power dissipation
tot = f (TC)
20
40
60
80
100
120
140
160
200
IPP04N03L
tot
2 Drain current
D = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
70
90
IPP04N03L
4 Max. transient thermal impedance
thJC = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10
IPP04N03L
thJC
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPP04N03L
IPP04N03L
IPB04N03L
5 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
160
190
IPP04N03L
6 Typ. drain-source on resistance
DS(on) = f (ID)
parameter: VGS
10
11
12
14
IPP04N03L
DS(on)
7 Typ. transfer characteristics
D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
120
160
8 Typ. forward transconductance
fs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
35
IPP04N03L
IPB04N03L
9 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 45 A, VGS = 10 V
10
IPP04N03L
DS(on)
10 Typ. gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diode
F = f (VSD)
parameter: T10 10 10 10
IPP04N03L
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