Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IP-GAL001-001 |
|
N/a |
160 |
|
|
IP-GAL001-001 |
TELEBIT |
N/a |
168 |
|
|
IPI028N08N3G , OptiMOS®3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPI037N08N3G , OptiMOS3 Power-Transistor
IPI08CN10N G , OptiMOS™2 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPI14N03LA ,OptiMOS®2applicationsI 30 AD• N-channel - Logic level• Excellent gate charge x R product (FOM)DS(on)• Very l ..
IPI200N15N3 G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IRLML0030TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 96278BIRLML0030TRPbFHEXFET Power MOSFETV 30 VDSV ± 20 VGS MaxG 1RDS(on) max 27mΩ3 D(@V = 10V ..
IRLML0040 ,40V Single N-Channel HEXFET Power MOSFET in a Micro3 packageFeatures and BenefitsBenefits
IRLML0040TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a Micro3 packagePD - 96309AIRLML0040TRPbFHEXFET Power MOSFETV VDSS 40V ± 16 VGS MaxG 1R DS(on) max56 mΩ(@V = 10V) ..