| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IM4A5-32/32-10JC-12J |
LATTICE |
N/a |
611 |
 |
|
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IRF7379QPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications.The efficient SO-8 package provides enhancedthermal characteristics and dual MOSFET di ..
IRF7379QTRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 packagefeatures of these HEXFET PowerMOSFET's are a 150°C junction operatingtemperature, fast switching s ..
IRF7379QTRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageIRF7379QPbF®HEXFET Power MOSFET Advanced Process TechnologyN-Ch P-Ch Ultra Low On-Re ..
