| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IM4A3-64-7VC-10VI |
LATTICE |
N/a |
23 |
 |
|
| IM4A3-64-7VC-10VI |
|
N/a |
112 |
|
|
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IRF7341 ,55V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD -91703AIRF7341®HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Du ..
IRF7341ITRPBF ,55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial marketapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7341Q ,55V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageapplications. This dual, surface mount SO-8 candramatically reduce board space and is also availabl ..
