Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IM4A3-32/32-10VC48 |
LATEICE |
N/a |
250 |
|
|
IM4A3-32/32-10VC48 |
LATTICE |
N/a |
118 |
|
|
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IRF7317 ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1568BIRF7317PRELIMINARY®HEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MO SFETN-Ch ..
IRF7317TR ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1568BIRF7317PRELIMINARY®HEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MO SFETN-Ch ..
IRF7319 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements,SO-8multiple devices can be used in an application withdrama ..