Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IM4A3-256/160-10YC-12YI |
LATEICE |
N/a |
23 |
|
|
IM4A3-256/160-10YC-12YI |
|
N/a |
139 |
|
|
IM4A3-256/160-10YC-12YI |
LATTICE |
N/a |
36 |
|
|
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IRF7314 ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1436BIRF7314PRELIMINARY®HEXFET Power MOSFETl Generation V Technology18S1 D1l Ultra Low On-Re ..
IRF7314Q ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D• Anti-lock Braking Systems (ABS) -20V 0.058@V = -4.5V -5.2AGS• ..
IRF7314QPBF ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. This dual,surface mount SO-8 can dramatically reduce boardspace and is also available ..