| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IKW30T60 |
INFINEON|Infineon |
N/a |
40 |
 |
|
IKW40T120 ,IGBTs & DuoPacksapplications offers :- very tight parameter distributionP-TO-247-3-1- high ruggedness, temperature ..
IKW40T120 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V V =0V, I =1.5mA 1200 - - V(BR)CES GE CCollector ..
IKW50N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V (BR)CES GE CCollecto ..
IKW75N60T ,600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IL1 ,Optocoupler, Phototransistor Output, With Base ConnectionFeatures • Current Transfer Ratio (see order information) Isolation Test Voltage 5300 VRMS6A 1 BA ..
IRF2807ZSTRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2Pak Packageapplications.TO-220AB D Pak TO-262IRF2807ZPbFIRF2807ZSPbF IRF2807ZLPbFAbsolute Maximum RatingsParam ..
IRF2903Z ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.GD SGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Curr ..
IRF2903ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV = 30VDSS 175° ..
