| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IHSM5832RF101L |
|
N/a |
1470 |
 |
|
IHSM-7832 ,High Current, Flame Retardant Encapsulated InductorELECTRICAL SPECIFICATIONS1.0 0.011 9.0 5.3Inductance: Measured at 1 volt with no DC current.1.2 0. ..
IHW15N120R3 , Reverse conducting IGBT with monolithic body diode
IHW15T120 ,IGBTs & DuoPacksapplications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IHW20N120R2 , Reverse Conducting IGBT with monolithic body diode
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IRF1018EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification inDSMPSV60VDSSUninter ..
IRF1018EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRF1018EPbFIRF1018ESPbFIRF1018ESLPbF
IRF1104 ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resista ..
