Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IHLP5050FDERR33M01L |
VISHAY|Vishay |
N/a |
156 |
|
|
IHP10T120 ,IGBTs & DuoPacksapplications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IHSM-4825 ,High Current, Flame Retardant Encapsulated InductorELECTRICAL SPECIFICATIONS(µH) (Ohms) (Max. Amps) (Amps Approx.)Inductance: Measured at 1 volt with ..
IHSM-7832 ,High Current, Flame Retardant Encapsulated InductorELECTRICAL SPECIFICATIONS1.0 0.011 9.0 5.3Inductance: Measured at 1 volt with no DC current.1.2 0. ..
IHW15N120R3 , Reverse conducting IGBT with monolithic body diode
IHW15T120 ,IGBTs & DuoPacksapplications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IRF1010E ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF1010E. ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF1010EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91670IRF1010E®HEXFET Power MOSFETl Advanced Process TechnologyDV = 60Vl Ultra Low On-Resistanc ..