IC Phoenix
 
Home ›  II14 > IGB03N120H2 ,1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGB03N120H2 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IGB03N120H2 |IGB03N120H2infineon N/a5000avai1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...


IGB03N120H2 ,1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...applications offers: - loss reduction in resonant circuits P-TO-247-3-1 P-TO-263-3-2 (D²-PAK)P-TO-2 ..
IGB15N60T ,1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...applications offers : - very tight parameter distribution P-TO-263-3-2 (D²-PAK)(TO-263AB) - high r ..
IGB30N60T , Low Loss IGBT in TrenchStop and Fieldstop technology
IGB50N60T ,1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...applications offers : - very tight parameter distribution P-TO-247-3-1 (TO-220AC) - high ruggedn ..
IGD01N120H2 ,IGBTs & DuoPacksapplications offers: - loss reduction in resonant circuits P-TO-263-3-2 (D²-PAK)P-TO-220-3-1 P-TO- ..
IGP03N120H2 ,IGBTs & DuoPacksDynamic Characteristic Input capacitance C - V =25V, 205 - pF iss CEOutput capacitance C V =0V, - ..
IR3Y30M1 , CCD Signal Processors for B/W CCD Cameras
IR3Y30M1 , CCD Signal Processors for B/W CCD Cameras
IR4007K , Switched Mode Power Supply IC
IR4426 ,Dual Low Side Driver, Inverting Input in a 8-pin DIP package Data Sheet No. PD60177 Rev. FIR4426/IR4427/IR4428(S) & (PbF)DUAL LOW SIDE DRIVER
IR4426PBF ,Dual Low Side Driver, Inverting Input in a 8-pin DIP packageElectrical CharacteristicsV (V ) = 15V, T = 25°C unless otherwise specified. The V , and I paramete ..
IR4426S ,Dual Low Side Driver, Inverting Input in a 8-lead SOIC packageElectrical CharacteristicsV (V ) = 15V, T = 25°C unless otherwise specified. The V , and I paramete ..


IGB03N120H2
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGP03N120H2, IGB03N120H2 IGW03N120H2 HighSpeed 2-Technology Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Tj Package Ordering Code 150°C P-TO-220-3-1 Q67040-S4599 150°C P-TO-263 (D2PAK) Q67040-S4598
Maximum Ratings

IGP03N120H2, IGB03N120H2 IGW03N120H2
Thermal Resistance
Characteristic

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IGP03N120H2, IGB03N120H2 IGW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Switching Energy ZVT, Inductive Load
IGBT Characteristic

IGP03N120H2, IGB03N120H2 IGW03N120H2
COL
R C
URR
10Hz100Hz1kHz10kHz100kHz
10A
12A
COL
R C
URR10V100V1000V,01A
0,1A
10Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
IPATI
25°C50°C75°C100°C125°C
10W
20W
30W
40W
50W
60W
R CU
25°C50°C75°C100°C125°C150°C0A
10A
12ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature

(Tj ≤ 150°C)
Figure 4. Collector current as a function of case temperature

(VGE ≤ 15V, Tj ≤ 150°C)
IGP03N120H2, IGB03N120H2 IGW03N120H2
COL
URR1V2V3V4V5V
10A
COL
URR1V2V3V4V5V
10AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics

(Tj = 25°C)
Figure 6. Typical output characteristics

(Tj = 150°C)
COL
URR5V7V9V0A
10A
12A
(sat)
LLE
R SA
TURA
LTAGE
-50°C0°C50°C100°C150°C0VVGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics

(VCE = 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature

(VGE = 15V)
IGP03N120H2, IGB03N120H2 IGW03N120H2
SWIT
G T
IME2A4A
1ns
10ns
100ns
1000ns
SWIT
G T
IME50Ω100Ω150Ω1ns
10ns
100ns
1000nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
Figure 10. Typical switching times as a
function of gate resistor

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
t,
ING TIMES
25°C50°C75°C100°C125°C150°C1ns
10ns
100ns
1000ns
GE(th
),
ITTE
HRES
-50°C0°C50°C100°C150°CTj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature

(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature

(IC = 0.09mA)
IGP03N120H2, IGB03N120H2 IGW03N120H2
ING E
SES2A4A
0.0mJ
0.5mJ
1.0mJ
ING E
SES50Ω100Ω150Ω200Ω250Ω
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
0.7mJIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω, dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor

(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
SWI
EN
25°C80°C125°C150°C
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
off
OFF
SW
CHING
EN
SS
0V/us1000V/us2000V/us3000V/us0.00mJ
0.04mJ
0.08mJ
0.12mJ
0.16mJ
IC=1A, TJ=150°CC=1A, TJ=25°CC=3A, TJ=150°CC=3A, TJ=25°CTj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE
Figure 15. Typical switching energy losses
as a function of junction temperature

(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E )
Figure 16. Typical turn off switching energy
loss for soft switching

(dynamic test circuit in Fig. E)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED