| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IDP105-2R0M |
|
N/a |
500 |
 |
|
IDP18E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 18 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IDP23E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 1900R ..
IDT04S60C , 2nd Generation thinQ SiC Schottky Diode
IDT06S60C , 2nd generation thinQ SiC Schottky Diode
IDT2305-1DCGI , 3.3V ZERO DELAY CLOCK BUFFER
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
