Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IDH04E120 |
infineon |Infineon |
N/a |
5000 |
|
|
IDP04E120 ,Silicon Power DiodesCharacteristics- - 2.9 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IDP06E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 500R ..
IDP09E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 9 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cjm ..
IDP09E60 ,Silicon Power DiodesCharacteristics- - 2.6 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IDP18E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 18 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)