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IDD23E60 Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
IDD23E60infineonN/a2499avaiSilicon Power Diodes


IDD23E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 23 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDP04E120 ,Silicon Power DiodesCharacteristics- - 2.9 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IDP06E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 500R ..
IDP09E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 9 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cjm ..
IDP09E60 ,Silicon Power DiodesCharacteristics- - 2.6 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IDP18E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 18 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cj ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)
IMB2A , PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
IMB3A , PNP -100mA -50V Complex Digital Transistors


IDD23E60
Silicon Power Diodes
IDD23E60
Fast Switching EmCon
DiodeProduct Summary
Feature

• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
IDD23E60
Thermal Characteristics
Characteristics
Static Characteristics
IDD23E60
Dynamic Characteristics
IDD23E60
2 Diode forward current
F = f(TC)
parameter: Tj≤ 175°C
10
15
20
25
30
35
45
1 Power dissipation
tot = f (TC)
parameter: T
15
30
45
60
75
90
120
tot
3 Typ. diode forward current

IF = f (VF)
10
20
30
40
50
70
4 Typ. diode forward voltage

VF = f (Tj)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IDD23E60
5 Typ. reverse recovery time
rr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
100
150
200
250
300
350
400
500
6 Typ. reverse recovery charge
rr=f(diF/dt)
parameter: VR= 400V, Tj = 125 °C
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
7 Typ. reverse recovery current
rr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
10
12
14
16
18
20
24
8 Typ. reverse recovery softness factor

S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
10
11
13
IDD23E60
9 Max. transient thermal impedance
thJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
IDD23E60
thJ
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