Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IDCP1813ER4R7M |
VISHHY|Vishay |
N/a |
100 |
|
|
IDD09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDD15E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 15 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDD23E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 23 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax ..
IDP04E120 ,Silicon Power DiodesCharacteristics- - 2.9 K/WThermal resistance, junction - case RthJC - - 62Thermal resistance, junct ..
IDP06E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 500R ..
IMB10A , General purpose (dual digital transistors)
IMB17A , General purpose (dual digital transistors)
IMB1A , General purpose (dual digital transistors)