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Partno Mfg Dc Qty AvailableDescript
ID9701L-TP DONGWOON N/a 7200



IDB04E120 ,Silicon Power DiodesFeatureV 1200 VRRM• 1200 V EmCon technologyI 4 AF• Fast recoveryV 1.65 VF• Soft switchingT 150 °Cjm ..
IDB04E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 35 ..
IDB06E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 6 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB06S60C , 2nd Generation thinQ SiC Schottky Diode
IDB09E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 70 ..
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