| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HZU16B2JTRF |
RENESAS |
N/a |
3970 |
 |
|
| HZU16B2JTRF |
HITACHI |
N/a |
12000 |
|
|
HZU2.4B , Silicon Epitaxial Planar Zener Diodes for Stabilizer
HZU3.3B , Silicon Epitaxial Planar Zener Diodes for Stabilizer
HZU4.7B , Silicon Epitaxial Planar Zener Diodes for Stabilizer
HZU5.6B3 , Silicon Epitaxial Planar Zener Diodes for Stabilizer
I100N50X4 , Flange Mount Termination 100 Watts, 50Ω
IDB09E120 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =1200V, T =25°C - - 100R jV =1200V, T =150°C - - 70 ..
IDB09E60 ,Silicon Power DiodesFeatureV 600 VRRM• 600 V EmCon technologyI 9 AF• Fast recoveryV 1.5 VF• Soft switchingT 175 °Cjmax• ..
IDB09E60 ,Silicon Power DiodesCharacteristicsReverse leakage current I µARV =600V, T =25°C - - 50R jV =600V, T =150°C - - 750R ..
