HYB514171BJ-60 ,256k x 16-Bit Dynamic RAM256k · 16-Bit Dynamic RAM HYB 514171BJ-50/-60Advanced Information• 262 144 words by 16-bit organiza ..
HYB514175BJ-50 ,-256k x 16-Bit EDO-DRAM256k · 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60Advanced Information• 262 144 words by 16-bit organiz ..
HYB514175BJ-55 ,256k x 16-Bit EDO-DRAM256k · 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60Advanced Information• 262 144 words by 16-bit organiz ..
HYB514175BJ-60 ,256k x 16 Bit EDO DRAM 5 V 60 ns256k · 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60Advanced Information• 262 144 words by 16-bit organiz ..
HYB514256BJ-60 , 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514265BJ-40 , 256K x 16-Bit EDO-Dynamic RAM
ICS9UMS9610CKLFT , PC MAIN CLOCK
ICSLV810FILFT , Buffer/Clock Driver
ICT49FCT3805ASO , 3.3V CMOS BUFFER/CLOCK DRIVER
ICTE-18 ,Diode TVS Single Uni-Dir 18V 1.5KW 2-Pin Case 41A-04 Boxapplications0.210 (5.3) • High temperature soldering guaranteed:O0.190 (4.8) 265 C/10 seconds, 0.37 ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 Box Document Number 883562 23-May-03ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386Visha ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 BoxThermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbol Limit UnitPeak pulse pow ..
HYB514171BJ-60
256k x 16 Bit FPM DRAM 5 V 50 ns
SIEMENS
256k M 16-Bit Dynamic RAM HYB 514171 BJ-50l-60
Advanced Information
262 144 words by 16-bit organization
0 to 70 °C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
CAS access time:
15ns (-50, -60 version)
Cycle time:
95 ns (-50 version)
110 ns (-60 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
Single + 5.0 V (i 10 %) supply with a
built-in VBB generator
Low Power dissipation
max. 1045 mW active (-50 version)
max. 935 mW active (-60 version)
Standby power dissipation
11 mW standby (TTL)
5.5 mW max. standby (CMOS)
Output unlatched at cycle end allows
two-dimensional chip selection
Read, write, read-modify write,
CAS-before-RAS refresh, RAS-only
refresh, hidden-refresh and fast page
mode capability
2 CAS / 1 W control
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
Plastic Packages:
P-SOJ-40-1 400 mil width
The HYB 514171BJ is a 4 MBit dynamic RAM organized as 262144 words by 16-bit. The
HYB 514171BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514171BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include single + 5 V (k 10 %)
power supply, direct interfacing with high performance logic device families such as Schottky TTL.
Semiconductor Group 1 1998-10-01
SIEMENS
HYB 514171 BJ-5OI-60
256k M 16 DRAM
Ordering Information
Ordering Code
Package
Description
HYB 514171 BJ-50
Q67100-Q2021
P-SOJ-40-1 400 mil
50 ns 256k M 16 DRAM
HYB 514171 BJ-60
Q67100-Q727
P-SOJ-40-1 400 mil
60 ns 256k x 16 DRAM
Truth Table
RAS LCAS UCAS WE OE IIO1 - II08 IIO9 - IIO16 Operation
H H H H H High-Z High-Z Standby
L H H H H High-Z High-Z Refresh
L L H H L Dout High-Z Lower byte read
L H L H L High-Z Dout Upper byte read
L L L H L Dout Dout Word read
L L H L H Din Don't care Lower byte write
L H L L H Don't care Din Upper byte write
L L L L H Din Din Word write
L L L H H High-Z High-Z
Pin Names
A0 - A8 Address Inputs
Ris Row Address Strobe
m, LC-AS Column Address Strobe
W ReadNVrite Input
E Output Enable
IIO1 - IIO16 Data Input/Output
Vcc Power Supply (+ 5 V)
' Ground (0 V)
NO. No Connection
Semiconductor Group
