HYB5118160BSJ-60 ,1M x 16 Bit 5 V 60 ns FPM DRAM
HYB5118165BSJ-50 ,1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BSJ-60 ,1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BSJ-60 ,1M x 16-Bit Dynamic RAM 1k Refresh
HYB514100BJ-60 ,4M x 1 Bit FPM DRAM 5 V 60 ns4M · 1-Bit Dynamic RAM HYB 514100BJ-50/-60Advanced Information• 4 194 304 words by 1-bit organizati ..
HYB514171BJ-60 ,256k x 16-Bit Dynamic RAM256k · 16-Bit Dynamic RAM HYB 514171BJ-50/-60Advanced Information• 262 144 words by 16-bit organiza ..
ICS9UMS9610CKLFT , PC MAIN CLOCK
ICSLV810FILFT , Buffer/Clock Driver
ICT49FCT3805ASO , 3.3V CMOS BUFFER/CLOCK DRIVER
ICTE-18 ,Diode TVS Single Uni-Dir 18V 1.5KW 2-Pin Case 41A-04 Boxapplications0.210 (5.3) • High temperature soldering guaranteed:O0.190 (4.8) 265 C/10 seconds, 0.37 ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 Box Document Number 883562 23-May-03ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386Visha ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 BoxThermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbol Limit UnitPeak pulse pow ..
HYB5118160BSJ-60
1M x 16 Bit 1k 3.3 V 50 ns FPM DRAM
SIEMENS
1M M 16-Bit Dynamic RAM
1k Refresh
(Fast Page Mode)
Advanced Information
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Fast Page Mode operation
Performance:
-50 -60
tRAC RP-is access time 50 60 ns
tCAC m access time 13 15 ns
tAA Access time from address 25 30 ns
tec ReadNVrite cycle time 84 104 ns
tec Fast page mode cycle time 35 40 ns
Power Dissipation, Refresh & Addressing:
HYB5118160 HYB3118160
-50 -60 -50 -60
Power Supply 5 V Ll- 10 % 3.3 V i 0.3 V
Addressing 10/10 10/10
Refresh 1024 cycles / 16 ms
Active 715 632 468 414 mW
TTL Standby 11 7.2 mW
CMOS Standby 5.5 3.6 mW
. Plastic Package:
Semiconductor Group
P-SOJ-42-1
400 mil
HYB 5118160BSJ-50l-60
HYB 3118160BSJ-50l-60
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
HYB 511816OBSJ-50l-60
HYB 3118160BSJ-50l-60
1M M 16 DRAM
SIEMENS
The HYB 5(3)118160 are 16 MBit dynamic RAMs based on die revisions "G" & "F" and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be
packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high
system bit densities and is compatible with commonly used automatic testing and insertion
equipment.
Ordering Information
HYB 5118160BSJ-50
HYB 5118160BSJ-60
HYB 3118160BSJ-50
HYB 3118160BSJ-60
Ordering Code
Q67100-Q1072
Q67100-Q1073
on request
Package Descriptions
P-SOJ-42-1 400 mil 5 V 50 ns FPM-DRAM
P-SOJ-42-1 400 mil 5 V 60 ns FPM-DRAM
P-SOJ-42-1 400 mil 3.3 V 50 ns FPM-DRAM
P-SOJ-42-1 400 mil 3.3 V 60 ns FPM-DRAM
on request
Pin Names
HYB 5(3)118160
Row Address Inputs A0 - A9
Column Address Inputs A0 - A9
Row Address Strobe R/VS
Upper Column Address Strobe UCAS
Lower Column Address Strobe LCAS
Output Enable ttE
Data Input/Output l/OI - |/O16
Read/Write Input VW
Power Supply Vcc
Ground (0 V) '
Not Connected N.C.
Semiconductor Group
