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HUFA76407DK8TFAIN/a5000avai3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET?Power MOSFET


HUFA76407DK8T ,3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET?Power MOSFETFeaturesJEDEC MS-012AA• Ultra Low On-ResistanceBRANDING DASH-r = 0.090Ω, V = 10VGS DS(ON)-r = 0.105 ..
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HUFA76407DK8T
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET?Power MOSFET
HUFA76407DK8
3.5A, 60V , 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET® Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance DS(ON) = 0.090Ω, VGS = 10V DS(ON) = 0.105Ω, VGS = 5V Simulation Models Temperature Compensated PSPICE® and SABER™
Electrical Models SPICE and SABER Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve Transient Thermal Impedance Curve vs Board Mounting
Area Switching Time vs R GS Curves
Ordering Information
Absolute Maximum Ratings
TA = 25o C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at:
JEDEC MS-012AA
DRAIN 1 (8)SOURCE1 (1)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
SOURCE2 (3)
GATE2 (4)
GATE1 (2)

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76407DK8T.
HUFA76407DK8 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current
Continuous (TA = 25o C, VGS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TA = 25o C, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TA = 100o C, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TA = 100o C, VGS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mW/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260CC
NOTES: TJ = 25o C to 125oC.50o C/W measured using FR-4 board with 0.76 in2 (490.3 mm2 ) copper pad at 1 second. 228o C/W measured using FR-4 board with 0.006 in2 (3.87 mm2 ) copper pad at 1000 seconds.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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