HUF75329S3ST ,49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETsapplications where power UIS Rating Curveefficiency is important, such as switching regulators, ..
HUF75332P3 ,60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75332P3 ,60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUF75333S3 ,66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75343P3 ,75A/ 55V/ 0.009 Ohm/ N-Channel UltraFET Power MOSFETsFeaturesPower MOSFETs• 75A, 55VThese N-Channel power MOSFETs• Simulation Modelsare manufactured usi ..
HUF75343S3ST ,75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETsapplications where power efficiency is Related Literature important, such as switching regulators ..
ICL3232IBN ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverFeatures (Except computers. Both devices also include noninverting always-ICL3232)active receivers ..
ICL3232IV ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverICL3221, ICL3222, ICL3223, ICL3232,®ICL3241, ICL3243Data Sheet November 2003 FN4805.11One Microamp ..
ICL3237ECA ,+-15kV ESD Protected, 10nA Supply- Current, +3V to +5.5V, 250k/1Mbps, RS-232 Transmitters/Receiversapplications are cell phones, Latch-Up FreePDAs, Palmtops, and notebook and laptop computers wher ..
ICL3237EIA ,+-15kV ESD Protected, 10nA Supply- Current, +3V to +5.5V, 250k/1Mbps, RS-232 Transmitters/ReceiversFeaturesCurrent, +3V to +5.5V, 250k/1Mbps, ESD Protection For RS-232 I/O Pins to ±15kV (IEC61000) ..
ICL3238CA ,1 microamp, +3V to +5.5V, 250kbps, RS-232 transceivers with enhanced automatic powerdownfeatures of the devices represented - Digital Camerasby this data sheet, while Application Note AN9 ..
ICL3238IA ,1 microamp, +3V to +5.5V, 250kbps, RS-232 transceivers with enhanced automatic powerdownApplicationstransmitter inputs detect no signal transitions for a period of • Any System Requiring ..
HUF75329S3ST
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
HUF75329G3, HUF75329P3, HUF75329S3S
49A, 55V , 0.024 Ohm, N-Channel UltraFET
Power MOSFETsThese N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features 49A, 55V Ultra Low On-Resistance, r DS(ON) = 0.024Ω Temperature Compensating PSPICE® and SABER™
Models Available on the web at: Thermal Impedance PSPICE and SABER Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-263AB
Product reliability information can be found at http:///products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
SOURCE
GATE
DRAIN
(TAB)SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
