HUF75321D3S ,20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETsElectrical Specifications T = 25 C, Unless Otherwise Specified CPARAMETER SYMBOL TEST CONDITIONS MI ..
HUF75321D3S ,20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75321D3ST ,20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75321P3 ,35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75329 ,49A, 55V, 0.024Ohm, N-Channel UltraFET Power MOSFETsapplications where power UIS Rating Curveefficiency is important, such as switching regulators, ..
HUF75329D3S ,20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
ICL3232EIV-16Z-T , ±15kV ESD Protected, 3V to 5.5V, 1μA, 250kbps, RS-232 Transmitters/Receivers
ICL3232EIV-20Z , ±15kV ESD Protected, 3V to 5.5V, 1μA, 250kbps, RS-232 Transmitters/Receivers
ICL3232IA ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of the devices represented
ICL3232IB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of the devices represented
ICL3232IBN ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverFeatures (Except computers. Both devices also include noninverting always-ICL3232)active receivers ..
ICL3232IV ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverICL3221, ICL3222, ICL3223, ICL3232,®ICL3241, ICL3243Data Sheet November 2003 FN4805.11One Microamp ..
HUF75321D3S
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
HUF75321D3, HUF75321D3S
20A, 55V , 0.036 Ohm, N-Channel UltraFET
Power MOSFETsThese N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Features 20A, 55V Simulation Models Temperature Compensating PSPICE® and SABER™
Models Thermal Impedance SPICE and SABER Models
Available on the web at: Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA JEDEC TO-252AA
Product reliability information can be found at http:///products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST.
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