Partno |
Mfg |
Dc |
Qty |
Available | Descript |
HN4B01JE(TE85L,F) |
OSHIBA |
N/a |
1200 |
|
|
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HN4B101J ,Power transistor for high-speed switching applicationsabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
HN4C51J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4D01JU ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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