| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HN4A74FK |
TOSHIBA|TOSHIBA |
N/a |
4292 |
 |
|
HN4B04J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
HN4B101J ,Power transistor for high-speed switching applicationsAbsolute Maximum Ratings (Ta = 25°C) Rating 1. Base (PNP) Characteristic Symbol Unit 2. Emitter (PN ..
HN4B101J ,Power transistor for high-speed switching applicationsabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
HN4C51J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4D01JU ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
