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HN4A06J-HN4A06J. Fast Delivery,Good Price
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HN4A06JTOSHIBAN/a9000avaiTransistor for low frequency small-signal amplification 2 in 1
HN4A06J. |HN4A06JTOSHIBAN/a2950avaiTransistor for low frequency small-signal amplification 2 in 1


HN4A06J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4A06J. ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-b ..
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HN4A56JU ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
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HN4A06J-HN4A06J.
Transistor for low frequency small-signal amplification 2 in 1
HN4A06J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A06J

Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V
z High hFE : hFE = 200 to 700
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Marking Equivalent Circuit (Top View)

Weight: 0.014g (typ.)
Unit: mm5
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