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HN3G01JTOSHIBAN/a6000avaiN CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR


HN3G01J ,N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTORAPPLICATIONSINT s.,-,,.,,-)))- l E5'1IIMAXIMUM RATINGS (Ta = 25°C)Q1CHARACTERISTIC SYMBOL RATING UN ..
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HN3G01J
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
TOSHIBA
HN3GO1J
TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
HIGH FREQUENCY AMPLIFIER APPLICATIONS
HN3tiii(rild
AM HIGH FREQUENCY AMPLIFIER APPLICATIONS
AUDIO FREQUENCY AMPLIFIER APPLICATIONS
cu. CM. 33,
MAXIMUM RATINGS (Ta=25°C) C/ il4 3
Q1 N T"'" o'
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDS -20 V E;
Gate Current IG 10 mA 3:
1. SOURCE
CHARACTERISTIC SYMBOL RATING UNIT 3- 1'ltiN/ EMITTER
Collector-Base Voltage VCBO 60 V 4: COLLECTOR
Collector-Emir Voltage VCEO 50 V 5. GATE
Emitter-Base Voltage CEBO 5 V JEDEC -
Collector Current 10 150 mA EIAJ -
Base Current 13 30 mA TOSHIB A 2-3L1B
COMMON RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation P* 200 mW
J unction Temperature Tj 125 °C
Storage Temperature Range Tstg -55--125 "C
* Total Rating
PIN ASSIGNMENT (TOP VIEW) Marking
5 4 Type Name
1:] Fl Cl IDSS Rank
Q1 Q2 Z L
III Cl III LI l LI
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-10-28 1/4
TOSHIBA HN3GO1J
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = - 15V, VDS = 0 - - - 1.0 nA
Gate-Drain Breakdown
Voltage V(BR)GDS VDS - o, IG-- - 100PA - 20 - - V
. IDSS - -
Drain Current (Note) VDS - 5V, VGS - 0 6 - 32 mA
Gate-Source Cut-off Voltage VGS (OFF) VDS = 5V, ID = 10 PA - - - 2.5 V
Forward Transfer Admittance |st| VDS = 5V, VGS = o, f = 1kHz 15 25 - mS
Input Capacitance Ciss VDS = 5V, VGS = o, f = lMHz - 7.5 10 pF
Reverse Transfer Capacitance Crss VDG = 5V, ID = 0, f = lMHz - 2 3 pF
Note : IDSS Classification
GR : 6~12mA, BL:10--20mA, V .' 16--32mA
(G) (L) (V)
( ) . . . IDSS Rank Marking
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60V, IE = 0 - - 0.1 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 0.1 pA
DC Current Gain hFE VCE = 6V, IC = 2mA 120 - 400
Collector-Emir
Saturation Voltage VCE (sat) 1C - 100mA, 1B - 10mA - 0.1 0.25 V
Transition Frequency fT VCE = 10V, 1C = 1mA 60 - - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 2.0 3.5 pF
1998-10-28 2/4
TOSHIBA
HN3GO1J
* Q1 CHARACTERISTICS
ID - VDS
COMMON
VGs=0V SOURCE
,1 Ta=25°C
o 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE vDsw)
ID - VGS
COMMON SOURCE
VDS--5v
Ta=25°C
IDss=23mA
_1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 o
GATEl-SOURCE VOLTAGE VGs(V)
5 VGS(OFF) - IDSS
<2 COMMON SOURCE
0 -3 IDSS: VDS=5V
m V VGs=0
E t; VGS(0FF)= VDS=5V
ie, ii ID=1Ap
m > Ta=25°C r.,..,.,---'''''"
D -1 ’
3 5 10 30 50
DRAIN CURRENT IDss (mA)
DRAIN CURRENT 11) (mA)
FORWARD TRANSFER ADMITTANCE
FORWARD TRANSFER ADMITTANCE
IYfl ( S) DRAIN CURRENT 11) (mA)
[stl (mS)
ID - VDS(LOW VOLTAGE REGION)
COMMON SOURCE
Ta = 25''C VGS = 0v
4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS(V)
lstl - IDss
IDss=30mA
COMMON
SOURCE
VDS--5V
f=1kHz
Ta=25°C
8 16 24 32 4O
DRAIN CURRENT ID (mA)
lyfsl - IDss
COMMON SOURCE
IDss .' VDS = 5V
VGS = 0
lyfsl : VDS = 5V
f=1kHz
Ta = 25''C
_,-..,-----'''""
5 10 30
DRAIN CURRENT IDss (mA)
1998-10-28 3/4
TOSHIBA
Ciss - VDS
COMMON
SOURCE
VGS = 0
f: lMHz
Ta = 25''C
INPUT CAPACITANCE Ciss (pF)
0.5 1 3 5 10 20
DRAIN-SOURCE VOLTAGE VDS(V)
* Q2 CHARACTERISTIC
IC - VCE
6.0 5.0 COMMON EMITTER
k" 3.0 Ta=25°C
n: 120
0 1 2 3 4 5 6 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
fp- IC
COMMON SOURCE
VCE = 10V
1000 Ta = 25°C
TRANSITION FREQUENCY fT (MIIz)
0.1 0.30.5 1 3 5 10 30 50100 300
COLLECTOR CURRENT 1C (mA)
REVERSE TRANSFER CAPACITANCE
TOTAL POWER DISSIPATION
DC CURRENT GAIN hFE
HN3GO1J
Crss - VGD
COMMON
SOURCE
VGS = 0
f = lMHz
Ta = 25''C
Crss (pF)
-0.5 -1 -3 -5 -10 -20
GATE-SOURCE VOLTAGE VGS(V)
hFE - IC
COMMON EMITTER
300 Ta-- 100°C VCE=6V
VCE=1V
0.1 0.3 0.5 1 3 5 10 30 50 100 300
COLLECTOR CURRENT 1C (mA)
Q1, Q2 COMMON CHARACTERISTICS
P - Ta
P (mW)
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
1998-10-28 4/4

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