| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HN3C06F |
TOSHIBA |TOSHIBA |
N/a |
3000 |
 |
|
| HN3C06F |
TOSHIBA|TOSHIBA |
N/a |
3200 |
|
|
HN3C10F ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mmIncluding Two Devices in SM6 (Super Mini Type with 6 Leads)MAXIMUM RATINGS ( ..
HN3C10FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
HN3C10FU ,RF 2-in-1 Hybrid TransistorsHN3C1OFUTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER
HN3C12FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN3G01J ,N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTORAPPLICATIONSINT s.,-,,.,,-)))- l E5'1IIMAXIMUM RATINGS (Ta = 25°C)Q1CHARACTERISTIC SYMBOL RATING UN ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
