HN2S03T ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition Min ..
HN3906 , NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications
HN3A51F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristics Symbol Test Condition Min ..
HN3B01F ,PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mm-+0.228-0.3t" A-tl 9 IQI:1.irriri' l. High Voltage and High Current: VCEO = ..
HN3B02FU ,Transistor Silicon PNP種PN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm Q1 High voltage : V = −50V CEOHigh current : I = −150mA (max) CHigh h ..
HN3C01F ,RF 2-in-1 Hybrid TransistorsHN3CO1FTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TTV TUNER, VHF CONVERTER APPLICATION. Unit i ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN2S03T
Small-signal Schottky barrier diode
HN2S03T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03T High Speed Switching Application Two independent diodes are mounted on Thin Extreme Super Mini Quad
package that are suitable for higher mounting densities. Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5μA (max) Small total capacitance : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Q1, Q2 Common, Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). : Unit rating. Total rating = Unit rating x 1.5
**: Total rating
Electrical Characteristics (Q1, Q2 Common, Ta = 25°C) Weight: 1.5 mg (typ.)
Unit: mm
