| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HN2S02JE(T5RSONY,E |
TOSHIBA|TOSHIBA |
N/a |
4000 |
 |
|
HN2S03FE ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HN2S03T ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition Min ..
HN3906 , NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications
HN3A51F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristics Symbol Test Condition Min ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
