| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HN2C12FT-O |
TOSHIBA|TOSHIBA |
N/a |
278 |
 |
|
HN2C12FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN2D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Applicatio ..
HN2D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mmUltra High Speed Switchi ..
HN2D01JE ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
HN2D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Unit: mmUltra High Speed Switching ..
HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY514400A , 1M x 4-bit CMOS DRAM
