Partno |
Mfg |
Dc |
Qty |
Available | Descript |
HN27C4096AG10 |
ST|ST Microelectronics |
N/a |
5 |
|
|
HN27C4096AG10 |
HITACHI |
N/a |
140 |
|
|
HN29W25611T-50 , 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
HN29W25611T-50H , 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
HN2C01FU ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (dual type) High voltage and high current : V = 50V, I = 150mA (m ..
HN2C10FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN2C12FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
HY29DL162TT-90I , 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL163TF-70I , 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
HY29DL163TT-70 , 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory