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HN1D03FUTOSHIBAN/a15000avaiDiode Silicon Epitaxial Planar Type Ultra High Speed Switching Application


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HN1D03FU
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN1D03FU
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03FU

Ultra High Speed Switching Application Built in anode common and cathode common.
Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance Q1, Q2: CT = 0.9pF (typ.)
Unit 2 Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.) Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.) Small total capacitance Q3, Q4: CT = 2.2pF (typ.)
Unit 1, Unit 2 Common Maximum Ratings (Ta = 25�
�� �C)
*: This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2
independently or simultaneously, the Maximum Ratings per diode is 75% of the single diode one.
Marking Pin Assignment (Top View)

Weight: 6.2mg
Unit: mm
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