IC Phoenix
 
Home ›  HH27 > HN1C26FS,Transistor for low frequency small-signal amplification 2 in 1
HN1C26FS Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
HN1C26FSTOSHIBAN/a60000avaiTransistor for low frequency small-signal amplification 2 in 1


HN1C26FS ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitCollec ..
HN1D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application ..
HN1D01FE ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
HN1D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Applicatio ..
HN1D02F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mmUltra High Speed Switching App ..
HN1D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio ..
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz


HN1C26FS
Transistor for low frequency small-signal amplification 2 in 1
HN1C26FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C26FS

Frequency General-Purpose Amplifier Applications • Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package. High voltage : VCEO = 50 V High current : IC = 100 mA (max)
• High hFE : hFE = 120 to 400
• Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Electrical Characteristics (Ta = 25°C)

Note: hFE Classification Y (F): 120 to 240, GR (H): 200 to 400 ( ) Marking symbol
Marking Equivalent Circuit (top view)

Unit: mm
Weight: 0.001 g (typ.) 56Type Name
hFE Rank
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED