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HN1C07FTOSHIBAN/a24000avaiTransistor for low frequency small-signal amplification 2 in 1


HN1C07F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Condition MinTyp. ..
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HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz


HN1C07F
Transistor for low frequency small-signal amplification 2 in 1
HN1C07F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C07F

Audio Frequency Small Power Amplifier Applications
Driver Stage Amplifier Applications
Switching applications Excellent Currrent gain(hFE ) linearity
: hFE(2) = 25 (min) at VCE = 6V, IC = 400mA
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)

Marking Equivalent Circuit (Top View)

Weight: 0.015g (Typ.)
Unit: mm56
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