| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HN1C05FE-A |
TOSHIBA|TOSHIBA |
N/a |
32000 |
 |
|
HN1C07F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Condition MinTyp. ..
HN1C26FS ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitCollec ..
HN1D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application ..
HN1D01FE ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
HN1D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Applicatio ..
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
