HN1B04FE ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) 6 5 4 Characteristic Symbol Rating Unit Collector power dissi ..
HN1C01F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HN1C01FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN1C01FU ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HN1C05FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
HN1C07F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Symbol Test Condition MinTyp. ..
HX8802-C , CVBS
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
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HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1B04FE
Transistor for low frequency small-signal amplification 2 in 1
HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current
: VCEO = 50V, IC = 150mA (max)
z High hFE : hFE = 120 to 400
z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2: High voltage and high current
: VCEO = −50V, IC = −150mA (max)
z High hFE : hFE = 120 to 400
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Weight: 3.0mg (typ.)
Unit: mm 2 3 5 6
Type Name
hFE Rank 2 3 5 6
Equivalent Circuit (Top View)
Marking
